EG2004 is a cost-effective MOS and IGBT gate driver chip with SD function, which integrates logic signal input processing circuit, dead zone control circuit, level shift circuit, pulse filtering circuit, and output driver circuit. It is specifically designed for brushless motor controllers and driving circuits in DC-DC power supplies.
The high-end operating voltage of EG2004 can reach 220V, while the low-end VCC power supply voltage range is wide from 10V to 20V. The input channel IN of the chip has a built-in 250K pull-down resistor, and the SD has a built-in 250K pull-down resistor. When the input is suspended, the upper and lower power MOSFETs are turned off, and the output current capability is IO+/-0.3/0.6A. It is packaged in SOP8.
EG2136 is a three-phase gate drive circuit used for high-voltage, high-speed power devices such as N-type power MOSFETs and IGBTs, consisting of three independent half bridge drive circuits. Built in dead time, input signal filtering, undervoltage protection, and overcurrent protection functions. In case of abnormalities, the six channel output can be turned off. It is suitable for 5V or 3.3V input voltage and has an output current capability of+0.2A/-0.35A. It is used in three-phase motor drive and other fields, and is packaged in SOP28L
EG2132 is a 300V gate driver with 9-20V Vcc range. Features logic processing, dead-time control, UVLO, interlock and 1.0/1.5A output. Includes 200K pull-down on HIN/LIN to disable MOSFETs when floating, in SOP8.
Medium Voltage 500V 1.2A Three-Phase Half-Bridge Driver Chip
EG2336 is a high cost-effective high-power MOS transistor and IGBT transistor gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, undervoltage protection circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. The high-end working voltage can reach 600V, and the low-end VCC power supply voltage range is wide from 8V to 20V. The chip has a locking function to prevent the output power transistors from conducting simultaneously. The input channels HIN and LIN have built-in pull-down resistors, which keep the upper and lower power MOS transistors in a closed state when the input is suspended. The output current capability is IO+0.6A/-1.2A.
Medium Voltage 200V Three-Phase Half-Bridge Driver Chip
EG2234 is a high cost-effective high-power MOS transistor and IGBT transistor gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, undervoltage protection circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. The high-end operating voltage can reach 200V, while the low-end VCC power supply voltage range is wide from 5V to 20V. The chip has a locking function to prevent the output power transistors from conducting simultaneously. The input channels HIN and LIN have built-in pull-down resistors, which keep the upper and lower power MOS transistors in a closed state when the input is suspended. The output current capability is IO+1.5A/2.0A.
Medium Voltage 300V 1.2A Three-Phase Half-Bridge Driver Chip
EG2134 is a high cost-effective high-power MOS transistor and IGBT transistor gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. The high-end working voltage can reach 300V, and the low-end VCC voltage range is 4.5V-20V. It has a locking function and an output current capability of I0+1.2A-1.4A. It is suitable for three-phase DC brushless motor drivers and is packaged in TSSOP20 and QFN24
High Voltage 600V 2A Half-Bridge Driver Chip with SD
EG2104 is an SD-enabled cost-efficient MOSFET/IGBT driver with dead-time control, level shifting, and output circuits. For brushless motors and DC-DC, handles 600V high-side and 2.8V-20V Vcc with 1uA standby. IN/SD have 200K pull-downs. Output: IO+/-2/2.5A in SOP8.
Medium Voltage 300V 1.2A Three-Phase Half-Bridge Driver Chip
EG2133 is a high cost-effective high-power MOS transistor and IGBT transistor gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. The high-end working voltage can reach 300V, and the low-end VCC voltage range is 4.5V-20V. It has a locking function and an output current capability of I0+1.2A-1.4A. It is used for three-phase DC brushless motor drivers and is packaged in TSSOP20
EG2226 is a cost-effective full bridge driver dedicated chip that integrates logic signal input processing circuit, undervoltage shutdown circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output driver circuit. The high-end working voltage can reach 600V, and the low-end VCC power supply voltage range is wide from 10V to 20V, with low static power consumption. The chip has a locking function to prevent the output power transistors from conducting simultaneously. The input channels HIN and LIN have built-in 250K pull-down resistors, which keep the upper and lower power MOS transistors in a closed state when the input is suspended. The output current capability is IO+/-0.6/1.0A.
It is a dedicated full bridge driver chip with two comparator functions, which integrates logic signal input processing circuit, SD control circuit, undervoltage shutdown circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. High end working voltage can reach 600V, low-end VCC power supply voltage range is 10V-20V, low static power consumption, with locking function, output current capability I0+/-0.3/0.6A
Full-Bridge Driver Chip with Overcurrent Protection
It is a dedicated full bridge driver chip with two comparator functions, which integrates logic signal input processing circuit, SD control circuit, undervoltage shutdown circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. High end working voltage can reach 600V, low-end VCC power supply voltage range is 10V-20V, low static power consumption, with locking function, output current capability I0+/-0.6A/1.0A, applied in inverter power supply, electric vehicle controller and other fields, using SSOP24 package
High cost-effective high-power MOS transistor, IGBT transistor gate driver dedicated chip, integrated 5V LDO and other circuits. High end floating bootstrap power supply with a withstand voltage of up to 600V, integrated with two half bridge drivers, suitable for 5V and 3.3V input voltages, maximum frequency of 500KHZ, low-end VCC voltage range of 3V-20V, output current capability of IO+2.0A-2.0A, built-in dead zone control circuit, built-in locking function, suitable for full bridge topology power supply, variable frequency water pump controller, etc., packaged in SOP28L
Full-Bridge Driver Chip with Overcurrent Protection
A high cost-effective full bridge driver dedicated chip with two comparator functions, integrating various circuits such as logic signal processing. The high-end floating bootstrap power supply has a withstand voltage of up to 600V, suitable for 5V and 3.3V input voltages, with a maximum frequency of 500KHZ. It has undervoltage shutdown output at VCC and VB terminals, with an output current capability of I0+/-0.8A/1.3A. It can also turn off HO and LO outputs at low SD levels and has overcurrent protection function. It is suitable for inverter power supplies, variable frequency water pump controllers, etc. It is packaged in SSOP24
EG3014S is an 80V half-bridge Darlington driver with 4.5-30V Vcc and 4.5mA standby. Features logic processing, dead-time control, interlock. Includes 10K pull-down on HIN/LIN to disable MOSFETs when floating, in SOP8.
EG3013S is an 80V half-bridge Darlington driver with 4.5-30V Vcc and 4.5mA standby. Features logic processing, dead-time control, interlock. Includes 15K pull-down (HIN) and 5V pull-up (LIN) to disable MOSFETs when floating, in SOP8.
EG3012S is an 80V half-bridge Darlington driver with 11-30V Vcc and 4.5mA standby. Features logic processing, dead-time control, UVLO, interlock. Includes 15K pull-down on HIN/LIN to disable MOSFETs when floating, in SOP8.
EG5620 is a 100V gate driver with SD function and 5-20V Vcc. Features logic processing, adjustable dead-time and 1.8/2.5A output. Includes 200K pull-down on IN/SD to disable MOSFETs when floating, in MSOP10.
EG2103 is a budget-friendly MOSFET/IGBT gate driver with undervoltage protection, logic processing, level shifting, and output circuits. For brushless motors and DC-DC, supports 600V high-side and 10V-20V Vcc. HIN has 200K pull-down, LIN has 200K pull-up. Output: IO+/-0.3/0.6A in SOP8.
Medium Voltage 200V 1A Half-Bridge Driver Chip with Large Dead Time
EG3023S is a 200V gate driver with 4.5-20V Vcc and <100μA standby. Features logic processing, dead-time control, UVLO, interlock and 0.6/1A output. Includes 200K pull-down (HIN) and pull-up (LIN) to disable MOSFETs when floating, in SOP8.
Medium Voltage 200V 1A Half-Bridge Driver Chip with Large Dead Time
EG3023 is a 200V gate driver with 7-20V Vcc and <100μA standby. Features logic processing, dead-time control, UVLO, interlock and 0.6/1A output. Includes 200K pull-down (HIN) and pull-up (LIN) to disable MOSFETs when floating, in SOP8.
EG2122 is a high cost-effective high-power MOS transistor and IGBT transistor gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, undervoltage shutdown circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. It is specifically designed for the drive circuit in brushless motor controllers. The high-end working voltage can reach 250V, and the low-end VCC power supply voltage range is wide from 8V to 20V, with low static power consumption. The chip has a locking function to prevent the output power transistors from conducting simultaneously. The input channels HIN and LIN have built-in 200K pull-down resistors, which keep the upper and lower power MOS transistors in a closed state when the input is suspended. The output current capability is I0+/-0.8/1.2A, and it is packaged in SOP8.
EG2121 is a high cost-effective high-power MOS transistor and IGBT transistor gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, undervoltage shutdown circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. It is specifically designed for the drive circuit in brushless motor controllers. Its high-end operating voltage can reach 250V, and the low-end VCC power supply voltage range is wide from 10V to 20V, with low static power consumption. This chip has a locking function to prevent the output power transistors from conducting simultaneously. The input channel HIN has a 200K pull-down resistor and LIN has an internal pull-up to 5V, which keeps the upper and lower power MOS transistors in a closed state when the input is suspended. The output current capability is 10+/-0.8/1.2A, and it is packaged in SOP8.
EG2003 is a cost-effective MOS and IGBT gate driver chip that integrates logic signal input processing circuit, undervoltage protection circuit, level shift circuit, pulse filtering circuit, and output driver circuit. It is specifically designed for brushless motor controllers and driving circuits in DC-DC power supplies. The high-end working voltage can reach 200V, and the low-end VCC power supply voltage range is 10V-20V. Input channel HIN built-in 200K pull-down resistor, LIN built-in 200K pull-up resistor, output current capability of IO+/-0.3/0.6A, using SOP8 package
EG2032 is a high cost-effective high-power MOS transistor and IGBT transistor gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, undervoltage shutdown circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. It is specifically designed for the drive circuit in brushless motor controllers. The high-end working voltage can reach 220V, and the low-end VCC power supply voltage range is wide from 9V to 20V, with a static power consumption of about 100uA. The chip has a locking function, with built-in 250K pull-down resistors for input channels HIN and LIN, and an output current capability of IO+/-1/1.5A. It is packaged in SOP8.
EG2031L is a high cost-effective high-power MOS transistor and IGBT transistor gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, undervoltage shutdown circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. It is specifically designed for the drive circuit in brushless motor controllers. The high-end working voltage can reach 220V, and the low-end VCC power supply voltage range is wide from 5V to 20V, with a static power consumption of about 250uA. The chip has a locking function, with a built-in 250K pull-down resistor in the input channel HIN and a built-in pull-up potential in LIN. The output current capability is IO+/-1/1.5A, and it is packaged in SOP8.
EG27324 is a cost-effective dual channel independent drive dedicated chip with SD function, which integrates logic signal input processing circuit, level shift circuit, and output drive circuit. It is used for drive circuits in motor controllers, power supplies, and transformers. The power supply voltage range is wide from 2.8V to 20V, with a static power consumption of less than 1uA. The input channels INA and INB each have an 85K pull-down resistor built in, and the SD has an 85K pull-down resistor built in. When the SD input is suspended, it does not affect the output of OUTA and OUTB. The output current capacity is 10+/-2/2.5A, and it is sealed with SOP8.
EG2101D is a cost-effective MOSFET/IGBT gate driver integrating logic processing, UVLO, level shifting, pulse filtering and output driving circuits, designed for brushless motor controllers and DC-DC power supplies.
EG1160 is a versatile cost-effective half-bridge driver with 5V LDO. Handles 600V high-side, 10V-20V Vcc, and <1.5mA standby current. Features pull-down inputs, interlock against cross-conduction, and 2A/2.5A output for power/motor applications in SOP16.
Low voltage 20V high-speed low test single channel driver chip
EG1416 single channel high-speed low side gate driver can effectively drive metal oxide semiconductor field-effect transistors and insulated gate bipolar transistor power switches. Provide high peak pulling/charging current pulses for capacitive loads, while also providing rail to rail driving capability and short propagation delay. The power supply voltage range is wide from 4V to 20V, and the static power consumption is less than 1uA. When VCC=12V, it can provide a peak of 2A for symmetrical drive current driving capability, using SOT23-5 packaging.
EG27519 single channel high-speed low side gate driver can effectively drive metal oxide semiconductor field-effect transistors and insulated gate bipolar transistor power switches. Provide high peak pulling/charging current pulses for capacitive loads, while also providing rail to rail driving capability and short propagation delay. The power supply voltage range is wide from 4V to 20V, with few peripheral devices and an IN+single input design. When VDD=12V, it can provide a peak of 4A for symmetrical drive current driving capability. It is packaged in SOT23-5
EG27517 single channel high-speed low side gate driver can effectively drive metal oxide semiconductor field-effect transistors and insulated gate bipolar transistor power switches. Provide high peak pulling/charging current pulses for capacitive loads, while also providing rail to rail driving capability and short propagation delay. The power supply voltage range is wide from 4V to 20V, with low static power consumption. It features a dual input design (with the option to choose between inverting IN - or inverting IN+driver configuration), and can provide peak 4A fill/pull (symmetrical drive) current driving capability when VDD=12V. It is packaged in SOT23-5
EG2104M is a cost-effective SD-enabled MOSFET/IGBT driver with dead-time control, level shifting, and output circuits. For brushless motors and DC-DC, handles 600V high-side and 10V-20V Vcc. IN/SD feature 200K pull-downs to turn off MOSFETs when floating. Output: IO+/-0.3/0.6A in SOP8.
Low voltage 20V high-speed low test single channel driver chip
EG44273 single channel high-speed low side gate driver can effectively drive metal oxide semiconductor field-effect transistors and insulated gate bipolar transistor power switches. Provide high peak pull/sink current pulses for capacitive loads, while also providing rail to rail driving capability and short propagation delay. The power supply voltage range is wide from 4V to 20V, and the static power consumption is less than 1uA. When VCC=12V, it can provide a peak of 2A for symmetrical drive current driving capability, using SOT23-5 packaging.
EG4427 is a cost-effective dual channel independent drive dedicated chip with SD function, which integrates logic signal input processing circuit, level shift circuit, and output drive circuit. It is used for drive circuits in motor controllers, power supplies, and transformers. The power supply voltage range is wide from 3V to 20V, with a static power consumption of less than 1uA. The input channels INA and INB each have a built-in 100K pull-down resistor, and the SD has a built-in 100K pull-down resistor. When the SD input is suspended, it does not affect the output of OUTA and OUTB. The output current capacity is 10+/-1.5/1.5A, and it is sealed with SOP8.
EG27322 is a cost-effective high-speed single channel drive dedicated chip that integrates logic signal input processing circuit, level shift circuit, and output drive circuit. It is used for driving circuits in motor controllers, solar inverters, switching power supplies, and transformers. The power supply voltage range is wide from 5V to 25V, with a static power consumption of less than 200uA. The input channel IN has a built-in 400K pull-down resistor. When the input is suspended, the QUTA is in a high resistance state, and the OUTB output is at a low level. The output current capability is 10+/-9/8A, and it is packaged in SOP8.
EG27524 is a cost-effective high-speed dual channel independent drive dedicated chip with enable control. It integrates logic signal input processing circuit, level shift circuit, and output drive circuit, and is used for drive circuits in motor controllers, solar inverters, switching power supplies, and transformers. The power supply voltage range is wide from 5V to 25V, with a static power consumption of less than 200uA. The input channels INA and INB each have a built-in 400K pull-down resistor, while ENA and ENB have a built-in 200K pull-up resistor. When the input is suspended, the output of OUTA and OUTB is at a low level, with an output current capacity of 10+/-5/4A. It is sealed with SOP8.
EG27325 is a cost-effective dual channel independent drive dedicated chip with SD function, which integrates logic signal input processing circuit, level shift circuit, and output drive circuit. It is used for drive circuits in motor controllers, power supplies, and transformers. The power supply voltage range is wide from 2.8V to 20V, with a static power consumption of less than 1uA. The input channels INA and INB each have an 85K pull-down resistor built in, and the SD has an 85K pull-down resistor built in. When the SD input is suspended, it does not affect the output of OUTA and OUTB. The output current capacity is 10+/-2/2.5A, and it is sealed with SOP8.
EG2136S is a three-phase gate drive circuit used for high-voltage and high-speed power devices such as N-type power MOSFETs and IGBTs. It mainly consists of three independent half bridge drive circuits, which have functions such as undervoltage protection, input noise filtering, dead time control, and overcurrent protection. It is suitable for 5V or 3.3V input voltage and has an output current capability of+0.2A/-0.35A. It is applied to three-phase motor drive and adopts SOP28L packaging
EG3003 is a cost-effective dual channel high-power MOS transistor and IGBT transistor gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, undervoltage shutdown circuit, lockout circuit, and output drive circuit. It is used for drive circuits in motor controllers, power supplies, and transformers. The power supply voltage range is 11V-20V, with a static power consumption of less than 100uA. It has a locking function to prevent the output power transistor from conducting simultaneously. The input channel INA has a built-in 200K pull-down resistor, and the INB has a built-in pull-up 5V high potential to turn off the power MOS transistor when the input is suspended. The output current capacity is 10+/-1/1.5A, and it is packaged in SOP8
EG3002 is a single channel high cost-effective power MOSFET or high-power bipolar transistor gate or base driver dedicated chip, which integrates input logic signal processing circuit, fast comparator, SD fast turn off processing circuit, and high current output driver circuit. It is used as a power MOSFET driver for power converters and motor controllers. The power supply voltage range is wide from 3V to 30V, with low static power consumption of only 2mA. The output structure has independent source output current OUTD terminal and suction current OUTS terminal pins, which can be used to independently adjust the rising edge time and falling edge time input to the G pole of the MOSFET.
EG3001 is a single channel high cost-effective power MOSFET or high-power bipolar transistor gate or base driver dedicated chip, which integrates input logic signal processing circuit, SD fast turn off processing circuit, and high current output driver circuit. It is designed for power MOSFET driver in power converters and motor controllers. The power supply voltage range is wide from 3V to 30V, with low static power consumption of only 2mA. The output structure has independent source output current OUTD terminal and suction current OUTS terminal pins, which can be used to independently adjust the rising edge time and falling edge time input to the G pole of the MOSFET.
EG3035 is a cost-effective three-phase PMOS and NMOS transistor gate drive dedicated chip, which integrates LDO, dead zone control circuit, undervoltage shutdown circuit, lockout circuit, and output drive circuit. It is used for motor controllers and power supply drive circuits. The power supply voltage range is 6V-36V, and the static power consumption is less than 1mA. This chip integrates a 5V output LDO, which can supply power to external MCU and other devices. When the input voltage exceeds 12V, in order to better match the P/N MOS transistor, the highest output voltage of LO is 11V, and the lowest output voltage of HO is VCC minus 11V. LO output current capability IO+/-0.045/0.28A, HO output current capability IO+/-0.26/0.04A.
EG2104S is an SD-featured economical MOSFET/IGBT driver with dead-time control, level shifting, and output circuits. For brushless motors and DC-DC, supports 600V high-side and 10V-20V Vcc. IN/SD have 200K pull-downs to disable MOSFETs when floating. Output: IO+/-1.0/1.5A in SOP8.
EG3032 is a cost-effective three-phase PMOS and NMOS transistor gate drive dedicated chip, which integrates LDO, dead zone control circuit, undervoltage shutdown circuit, lockout circuit, and output drive circuit. It is used for motor controllers and power supply drive circuits. The power supply voltage range is 6V-36V, and the static power consumption is less than 1mA. This chip integrates a 3.3V output LDO and can supply power to external MCU and other devices. When the input voltage exceeds 12V, in order to better match the P/N MOS transistor, the highest output voltage of LO is 12V, and the lowest output voltage of HO is VCC minus 12V. LO output current capability IO+/-0.037/0.11A, HO output current capability IO+/-0.23/0.02A.
EG3033 is a cost-effective three-phase PMOS and NMOS transistor gate drive dedicated chip, which integrates LDO, dead zone control circuit, undervoltage shutdown circuit, lockout circuit, and output drive circuit. It is used for motor controllers and power supply drive circuits. The power supply voltage range is 6V-36V, and the static power consumption is less than 1mA. This chip integrates a 5V output LDO, which can supply power to external MCU and other devices. When the input voltage exceeds 12V, in order to better match the P/N MOS transistor, the highest output voltage of LO is 11V, and the lowest output voltage of HO is VCC minus 11V. LO output current capability IO+/-0.045/0.28A, HO output current capability IO+/-0.26/0.04A.
Low Voltage 65V 1.5A Three-Phase Half-Bridge Driver Chip
EG2163 is a high cost-effective high-power MOS transistor three-phase independent gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, undervoltage protection circuit, lockout circuit, level shift circuit, pulse filtering circuit, bootstrap diode, 5V LDO and 12V LDO circuits, and output drive circuit. The high-end operating voltage can reach 70V, the low-end VCC voltage range is 4.5V-20V, and the output current capability is I0+1.5A/-1.8A. It is suitable for 12V and 24V three-phase motor applications and is packaged in SSOP24
High Voltage 600V 1.2A Three-Phase Half-Bridge Driver Chip
EG2334 is a high cost-effective high-power MOS transistor and IGBT transistor gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. The high-end working voltage can reach 600V, and the low-end VCC power supply voltage range is wide from 4.5V to 20V. The chip has a locking function to prevent the output power transistors from conducting simultaneously. The input channels HIN and LIN have built-in pull-down resistors, which keep the upper and lower power MOS transistors in a closed state when the input is suspended. The output current capability is IO+1.2A -1.4A.
EG21364 is a three-phase gate drive circuit used for high-voltage, high-speed power devices such as N-type power MOSFETs and IGBTs, mainly consisting of three independent half bridge drive circuits. Built in dead time ensures that the upper and lower bridge arms of the power transistor do not conduct simultaneously. Built in input signal filtering to prevent noise interference. Provide external enable control to simultaneously turn off six channel outputs. In addition, it also has undervoltage protection and overcurrent protection functions, and immediately shuts off the six channel output in case of abnormalities.
EG2108 is a cost-effective MOSFET/IGBT gate driver with undervoltage protection, logic processing, level shifting, pulse filtering, and output circuits. Designed for brushless motors and DC-DC applications, it supports 600V high-side and 10V-20V VCC. HIN/LIN have 200K pull-downs to turn off MOSFETs when floating. Output: IO+/-0.3/0.6A in SOP8.
EG2181D is a cost-efficient high-power MOSFET/IGBT driver with logic processing, level shifting and output circuits. Designed for brushless motor controllers, it supports 600V high-side voltage and 10V-20V VCC with 200μA standby current. Features 200K pull-down resistors on HIN/LIN to turn off MOSFETs when inputs float. Output capability: IO+/- 2/2.5A in SOP8 package.
Medium voltage 260V1.2A three-phase half bridge driver chip
High-cost-performance dedicated gate driver chip for high-power MOSFETs and IGBTs, integrating multiple circuits such as logic signal processing. High-side floating bootstrap power supply withstands voltage up to 260V, featuring three independent half-bridge drivers, compatible with 5V and 3.3V input voltages, maximum frequency of 500KHZ, low-side VCC voltage range of 5V - 20V, output current capability of IO+0.8A - 1.2A, with undervoltage protection for VCC and VB, built-in dead-time control circuit, and self-locking function. Suitable for three-phase DC brushless motor drivers, packaged in TSSOP20 and QFN24.
EG21814 is an economical high-power MOSFET/IGBT driver with logic processing, level shifting and output circuits. For brushless motor controllers, it handles 600V high-side voltage and 10V-20V Vcc with 200μA standby current. Features 200K pull-down resistors on HIN/LIN to disable MOSFETs when inputs float. Output capability: IO+/- 2.5/3A in SOP14 package.
EG2181 is a cost-effective high-power MOSFET/IGBT driver with dead-time control, interlock, level shifting and output circuits. Designed for brushless motor controllers, it supports 600V high-side voltage and 3.5V-20V Vcc with ultra-low 5μA standby current. Features 200K pull-down resistors on HIN/LIN to turn off MOSFETs when inputs float, and cross-conduction prevention. Output capability: IO+/- 2/2.5A in SOP8 package.
High Voltage 600V 2A Half-Bridge Driver Chip with SD
EG2130 is an economical SD-enabled MOSFET/IGBT gate driver with dead-time control, level shifting and output circuits. For brushless motor controllers and DC-DC applications, it handles 600V high-side voltage and 2.8V-20V Vcc with 1μA standby current. Features 200K pull-down resistors on IN/SD channels to disable MOSFETs when inputs float. Output capability: I0+/-2/2.5A in SOP8 package.
EG2110 is a cost-effective high-power MOSFET/IGBT gate driver integrating logic processing, dead-time control, interlock, level shifting and output circuits. Designed for brushless motor controllers, it supports 650V high-side voltage and 10V-20V Vcc with 180μA standby current. Features 250K pull-down resistors on HIN/LIN to turn off MOSFETs when inputs float, and interlock to prevent cross-conduction. Output capability: IO+/-2.5A/2.5A in SOP16/SOW16 packages.
EG2113D is a high-power economical MOSFET/IGBT driver with dead-time control, interlock, level shifting, and output circuits. For brushless motor controllers, handles 600V high-side and 10V-20V Vcc with 50uA standby. HIN/LIN feature 200K pull-downs to turn off MOSFETs when floating. Output: IO+/-2A/2A in SOP16/SOW16.
EG2113S is a high-power cost-efficient MOSFET/IGBT driver with dead-time control, interlock, level shifting, and output circuits. For brushless motor controllers, supports 600V high-side and 2.8V-20V Vcc with 5uA standby. HIN/LIN have 200K pull-downs to disable MOSFETs when floating. Output: IO+/-2A/2A in wide-body SOP16.
EG27710 is a 600V gate driver with 10-25V Vcc and 0.6/1.0A output. Features logic processing, UVLO, level shifting. Includes 200K pull-down on HIN/LIN to disable MOSFETs when floating, in SOP8.
EG6388 is a 600V gate driver with 10-25V Vcc and 0.5/0.9A output. Features logic processing, UVLO, dead-time, level shifting. Includes 200K pull-down on HIN/LIN to disable MOSFETs when floating, in SOP8.
EG2304 is a 600V gate driver with 10-25V Vcc and 0.3/0.6A output. Features logic processing, UVLO, level shifting. Includes 200K pull-down on HIN/LIN to disable MOSFETs when floating, in SOP8.
EG2183D is an economical high-power MOSFET/IGBT driver with dead-time control, interlock, level shifting and output circuits. For brushless motor controllers, it handles 600V high-side voltage and 8V-20V Vcc with 300μA standby power. Features 200K pull-down on HIN and 5V pull-up on LIN to disable MOSFETs when floating. Output capability: I0+/-2/2.5A in SOP8.
EG2123A is a high-power cost-efficient MOSFET/IGBT gate driver with logic processing and three independent half-bridge channels. Features 260V bootstrap voltage, supports 5V/3.3V inputs, 500KHz max frequency, and 7V-20V VCC range. With 0.8A/1.2A output current, undervoltage protection, dead-time control, and interlock for three-phase brushless motor drives in TSSOP20.
Half-Bridge Driver Chip with Overcurrent Protection
EG2107 is a cost-effective half-bridge driver with cycle-by-cycle CS protection, integrating logic processing, dead-time control, undervoltage lockout, interlock, level shifting, and output circuits. Supports 600V high-side and 8V-25V Vcc with low standby power. Features 250K pull-down on IN to disable MOSFETs when floating, and interlock to prevent cross-conduction. Output: IO+/-0.8/1.3A in SOP8.
EG2203 is a cost-efficient GBT/MOSFET gate driver with undervoltage protection, logic processing, level shifting, and output circuits. For brushless motors and DC-DC, it handles 600V high-side and 10V-25V VCC. HIN has 200K pull-down, LIN has 200K pull-up to disable MOSFETs when floating. Output: 10+/-0.5/1.0A in SOP8.
EG2206 is an economical GBT/MOSFET gate driver with undervoltage protection, logic processing, level shifting, and output circuits. For brushless motors and DC-DC applications, it supports 600V high-side and 10V-25V VCC. HIN/LIN have 200K pull-downs to disable MOSFETs when floating. Output: I0+/-0.5/1.0A in SOP8.
EG2005 is a high-power cost-effective MOSFET/IGBT gate driver with dead-time control, undervoltage lockout, interlock, and output circuits. For brushless motor controllers, it handles 220V high-side and 10V-20V VCC with 100uA standby current. Features 250K pull-downs on HIN/LIN and interlock function. Output: IO+/-0.3/0.6A in SOP8.
EG2101 is a budget-friendly MOSFET/IGBT gate driver with undervoltage protection, logic processing, level shifting, and output circuits. Designed for brushless motors and DC-DC applications, it supports 600V high-side and 10V-25V VCC. HIN/LIN have 250K pull-downs. Output: IO+/-0.3/0.6A in SOP8.
EG2106D is an economical MOSFET/IGBT gate driver with undervoltage protection, logic processing, level shifting, and output circuits. For brushless motors and DC-DC applications, it handles 600V high-side and 10V-25V Vcc. HIN/LIN feature 200K pull-downs to disable MOSFETs when inputs float. Output: IO+/-0.3/0.6A in SOP8.
EG2106 is a cost-effective MOSFET/IGBT gate driver with undervoltage protection, logic processing, level shifting, pulse filtering, and output circuits. Designed for brushless motors and DC-DC applications, it supports 600V high-side and 10V-20V VCC. HIN/LIN have 200K pull-downs to turn off MOSFETs when floating. Output: IO+/-0.3/0.6A in SOP8.
EG2302 is an SD-featured cost-efficient MOSFET/IGBT gate driver with logic processing, dead-time control, level shifting, pulse filtering, and output circuits. For brushless motor controllers and DC-DC applications, it handles 600V high-side voltage and 5V-25V VCC. IN has 200K pull-down, SD has 500K pull-up - SD low turns off MOSFETs. Output: 10+/-0.3/0.6A in SOP8.
EG2204 is a 600V gate driver with SD function and 9-25V Vcc. Features logic processing, dead-time control. Includes 200K pull-down on IN/SD to disable MOSFETs when floating. Output current I0+/-0
EG2104D is a cost-effective MOSFET/IGBT gate driver with SD function, integrating logic signal input processing, dead-time control, level shifting, pulse filtering, and output driving circuits. Designed for brushless motor controllers and DC-DC power supplies, it supports high-side voltages up to 600V and low-side VCC range of 9V-25V. The IN channel has a built-in 200K pull-down resistor, and the SD channel has a 200K pull-down resistor, ensuring MOSFETs turn off when inputs are floating. Output current capability is IO+/-0.3/0.6A in SOP8 package.
EG3113 is a 600V gate driver with 2.8-20V Vcc and <5μA standby. Features logic processing, dead-time control, UVLO, interlock and 2/2.5A output. Includes 200K pull-down (HIN) and 5V pull-up (LIN) to disable MOSFETs when floating, in SOP8/DFN8.
EG2031 is a high cost-effective high-power MOS transistor and IGBT transistor gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, undervoltage shutdown circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. It is specifically designed for the drive circuit in brushless motor controllers. The high-end working voltage can reach 220V, and the low-end VCC power supply voltage range is wide from 11V to 20V, with a static power consumption of about 100uA. The chip has a locking function, with a built-in 250K pull-down resistor in the input channel HIN and a built-in pull-up potential in LIN. The output current capability is IO+/-1/1.5A, and it is packaged in SOP8.
EG2011 is a high cost-effective high-power MOS transistor and IGBT transistor gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, undervoltage shutdown circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. It is specifically designed for the drive circuit in brushless motor controllers. The high-end working voltage can reach 220V, and the low-end VCC power supply voltage range is wide from 10V to 20V, with a static power consumption of about 100uA. The chip has a locking function, with built-in 250K pull-down resistors for input channels HIN and LIN, and an output current capability of IO+/-1.0/1.0A. It is packaged in SOP8.
EG1160 is a versatile cost-effective half-bridge driver with 5V LDO. Handles 600V high-side, 10V-20V Vcc, and <1.5mA standby current. Features pull-down inputs, interlock against cross-conduction, and 2A/2.5A output for power/motor applications in SOP16.
EG2131D is a 220V gate driver with 11-20V Vcc and ~100μA standby. Features logic processing, dead-time control, UVLO, interlock and 1/1.5A output. Includes 250K pull-down (HIN) and pull-up (LIN) to disable MOSFETs when floating, in SOP8.
EG2131 is a 300V gate driver with 11-20V Vcc and <100μA standby. Features logic processing, dead-time control, UVLO, interlock and 1/1.5A output. Includes 200K pull-down (HIN) and pull-up (LIN) to disable MOSFETs when floating, in SOP8.
High Voltage 600V Self-Oscillating Half-Bridge Driver Chip
EG2153 is a high-voltage high-speed MOSFET/IGBT gate driver with integrated oscillator. Features CT pin for shutdown protection (stops output with voltage signal), outputs low when VDD is below threshold, oscillates at stable frequency when above.
EG12522 is a dedicated dual-switch forward driver with 600V rating and 4-20V Vcc. Features logic processing, level shifting and 0.8/1.2A output. Includes 100K pull-down on IN to disable MOSFETs when floating, in SOP8.
Dual Transistor Forward High Voltage 600V 1A Half-Bridge Driver Chip
EG12521 is a 600V dual-switch forward driver with 4-20V Vcc and 0.8/1.2A output. Features logic processing, level shifting for dual-switch forward converters. Includes 200K pull-down on HIN/LIN to disable MOSFETs when floating, in SOP8.
EG3116D is a 600V gate driver with 10-20V Vcc and ~200μA standby. Features logic processing, level shifting and 2/2.5A output. Includes 200K pull-down on HIN/LIN to disable MOSFETs when floating, in SOP8.
EG3116 is a 600V gate driver with 10-20V Vcc. Features logic processing, dead-time control, UVLO, interlock and 2/2.5A output. Includes 200K pull-down on HIN/LIN to disable MOSFETs when floating, in SOP8.
EG3113D is a 600V gate driver with 8-20V Vcc and ~300μA standby. Features logic processing, dead-time control, UVLO, interlock and 2/2.5A output. Includes 200K pull-down (HIN) and 5V pull-up (LIN) to disable MOSFETs when floating, in SOP8.
EG2108D is a cost-effective dedicated chip for MOSFET and IGBT gate driving, integrating logic signal input processing circuits, undervoltage protection, dead-time control, level shifting, pulse filtering, and output driving circuits. It is specifically designed for brushless motor controllers and DC-DC power supply driving circuits. The high-side operating voltage can reach 600V, and the low-side VCC power supply range is wide (10V - 25V). The chip features built-in 200K pull-down resistors on HIN and LIN input channels, ensuring the upper and lower power MOSFETs remain off when inputs are floating. The output current capability is IO+/-0.3/0.6A, packaged in SOP8.
EG3114 is a high-power 600V gate driver with 10-20V Vcc and ~200μA standby. Features logic processing, level shifting and 4A output. Includes 250K pull-down on HIN/LIN to disable MOSFETs when floating, in SOP8.
High voltage 600V2A half bridge and push-pull power supply dedicated driver chip
EG1168 is an economical half-bridge/push-pull driver with integrated 5V LDO. Supports 600V high-side, 10V-20V Vcc, and <1.5mA standby current. Features pull-down resistors, interlock, and single PWM input generating symmetrical half-bridge/push-pull outputs. 2A/2.5A output current for digital power applications in SOP16.
EG3118 is a 650V gate driver with 5-20V Vcc and ~170μA standby. Features logic processing, level shifting and 2.5A output. Includes 250K pull-down on HIN/LIN to disable MOSFETs when floating, in SOP8.
EG3112 is a high cost-effective high-power MOS transistor and IGBT transistor gate drive dedicated chip, which integrates logic signal input processing circuit, dead zone control circuit, lockout circuit, level shift circuit, pulse filtering circuit, and output drive circuit. It is specifically designed for the drive circuit in brushless motor controllers. The high-end working voltage can reach 600V, and the power supply voltage range of low-end VCC is wide from 2.8V to 20V, with a static power consumption of less than 5uA. The chip has a locking function to prevent the output power transistors from conducting simultaneously. The input channels HIN and LIN have a built-in 200K pull-down resistor, which keeps the upper and lower power MOS transistors in a closed state when the input is suspended. The output current capability is IO+/-2/2.5A, and it is packaged in SOP8.
EG21867 is a high-power 600V gate driver with 7.7-20V Vcc and ~200μA standby. Features logic processing, level shifting and 4A output. Includes 250K pull-down on HIN/LIN to disable MOSFETs when floating, in SOP8.
EG2186 is a high-power 600V gate driver with 10-20V Vcc and <200μA standby. Features logic processing, level shifting and 4A output. Includes 250K pull-down on HIN/LIN to disable MOSFETs when floating, in SOP8.
EG2185 is a cost-effective high-power MOSFET/IGBT driver with dead-time control, interlock, level shifting and output circuits. Designed for brushless motor controllers, it handles 600V high-side voltage and 10V-20V VCC with 200μA standby power. Features 250K pull-down on HIN and 5V pull-up on LIN to turn off MOSFETs when floating. Output capability: 0+/-4/4A in SOP8.
EG2184S is an SD-featured economical MOSFET/IGBT driver with dead-time control, undervoltage protection, level shifting and output circuits. For brushless motors and DC-DC, it supports 650V high-side voltage and 10V-20V VCC. Features 250K pull-down on IN/SD (SD low disables MOSFETs). Output capability: IO+/- 2.5/2.5A in SOP8.
EG2184 is an SD-enabled cost-efficient MOSFET/IGBT driver with dead-time control, undervoltage protection, level shifting and output circuits. For brushless motors and DC-DC applications, it handles 600V high-side voltage and 10V-20V VCC. Features 200K pull-down on IN and 200K pull-up on SD (SD low turns off MOSFETs). Output capability: IO+/- 1.9/2.3A in SOP8.
EG2183Q is a cost-effective high-power MOSFET/IGBT driver with dead-time control, interlock, level shifting and output circuits. Designed for brushless motor controllers, it supports 650V high-side voltage and 10V-20V VCC with 200μA standby power. Features 250K pull-down on HIN and pull-up on LIN to turn off MOSFETs when floating. Output capability: 1O+/-2/2.5A in SOP8.
